• June 2020: Our group members are going to present a number of exciting papers on Gallium Oxide MOVPE growth, devices and modeling at the virtual EMC (2 presentations) and DRC (2 presentations,1 poster) conferences.
    • 78th Device Research Conference
      • Arkka Bhattacharyya : High-Density Electron Gas β-Ga2O3 Field Effect transistors with Metalorganic Vapor Phase Epitaxy-Regrown Ohmic Contacts
      • Saurav Roy : Design and simulation of β-Ga2O3 vertical Schottky barrier diode with p-type III-Nitride guard ring for enhanced breakdown
      • Saurav Roy: Improving the BV-Ron trade-off of β-Ga2O3 vertical Schottky barrier diode Using Dielectric Superjunction (Poster)
    • 62nd Electronic Materials Conference
      • Praneeth Ranga:  High-Density Degenerate Electron Gas (1013 cm-2) in β-(AlxGa1-x)2O3/ β-Ga2O3 Heterostructures Grown By Metalorganic Vapor Phase Epitaxy
      • Arkka Bhattacharyya : Selective Area Regrown Low Resistance Ohmic Contacts on β-Ga2O3 Epitaxial Layers Using Metalorganic Vapor Phase Epitaxy
  • May 2020: Praneeth Ranga is awarded University Graduate Research Fellowship 2020-2021. Congratulations Praneeth!
  • October 2019: Praneeth’s Applied Physics Express journal article on MOVPE growth and doping in Aluminum Gallium Oxide listed as Spotlights 2019 article. (


12. “Electrical and Optical Properties of Zr doped β-G2O3 Single Crystals Grown by Czochralski Method,” Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In ICCGE-19, Keystone, CO, 2019. (Poster). Award

Two awards sponsored by Elsevier and by IUCR for his poster presentation in ICCGE-19 in Keystone, CO ; Our paper on Zr doped β-Ga2O3, was featured in a review in the Compound Semiconductor Magazine: Lead authors from Washington State University

11. Equipping MOCVD Tools With Dual Use Capability, April 2019

May 2019

10. U Engineers Start Study on Better High-Voltage Electronics, Dec 2018

University of Utah engineers will study better semiconductor material for high-voltage electronics,

Dec 2018


  1. Layered 2D dichalcogenides grow on 3D semiconductors May 2017
  2. Quantum tunneling boosts UV LED efficiency , April 2016
  3. Band engineering for improved photo-electro-chemical etch”, Semiconductor Today, 14th July 2014.
  4. Epitaxial cascading of LEDs to tackle efficiency droop”, Compound Semiconductor, 25th September 2013.– droop.html
  5. Tunneling to avoid efficiency droop in nitride semiconductor LEDs”, Semiconductor Today, 30th August 2013.
  6. Lowering tunneling resistance in GaN/InGaN/GaN structures”, Semiconductor Today, 3rd April 2013.
  7. Flattening transconductance profiles in nitride HEMTs”, Semiconductor Today, 23rd February 2012.
  8. Reversing polarization to tackle overshoot and droop”, Semiconductor Today, 30th March 2012. http://www.semiconductor-
  9. Ohio boosts nitride tunneling current to 118 A/cm2 at -1 V”, Semiconductor Today, 24th November 2010.