CONFERENCE PRESENTATIONS

Student authors from Krishnamoorthy Group underlined

2020

[to be updated]

2019

114. Sriram Krishnamoorthy, Praneeth Ranga, and Arkka Bhattacharyya, "High Density Electron Gas in Ultrawide Bandgap Oxide Heterostructures Towards High Power and High Frequency Electronics (Invited Talk)"- presented by Prof. Krishnamoorthy, XX^th International Workshop on Physics of Semiconductor Devices: IWPSD 2019. December 17-20, 2019. Venue: Novotel Hotel And Residences, Kolkata, India.

113. Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks, Sriram Krishnamoorthy, “Growth of Homoepitaxial β-Ga2O3 Films using Far Injection MOVPE Reactor”, IWGO 2019 (~ 30% acceptance rate for talks)

112. Praneeth Ranga, Ashwin Rishinaramangalam, Arkka Bhattacharyya, Luisa Whittaker-Brooks, Daniel Feezell, Sriram Krishnamoorthy, “MOVPE-GROWN SI-DOPED β-(Al0.25Ga0.75)2O3 THIN FILMS AND HETEROJUNCTIONS”, OMVPE 2019 Late News (Presented by Prof. Krishnamoorthy)

111. Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Santosh Swain, Michael Scarpulla, Kelvin Lynn and Sriram Krishnamoorthy, “Schottky Barrier Height Engineering in β-Ga₂O₃ using a dielectric interlayer”, IWGO 2019 (Poster)

110. Joseph Lyman, and Sriram Krishnamoorthy, “Theoretical Investigation of Infrared Photodetection in Gallium Oxide/ Aluminum Gallium Oxide Quantum Well Structures”, IWGO 2019 (~ 30% acceptance rate for talks)

109. “Electronic Properties of Zr and Hf Doped β-Ga2O3 Single Crystals”, Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In 30^th International Conference of Defects in Semiconductors, Seattle, WA, 2019. (Oral Presentation).

108. “Electronic Properties and Defect Energies in Zr-doped β-Ga2O3 Single Crystal,” Jesenovec, J., M. Saleh, S. Swain, A. Bhattacharyya, S. Krishnamoorthy, J. McCloy, K. Lynn. In 30^th International Conference of Defects in Semiconductors, Seattle, WA, 2019. (Poster).

107. “Electrical and Optical Properties of Zr doped β-G2O3 Single Crystals Grown by Czochralski Method,” Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In ICCGE-19, Keystone, CO, 2019. (Poster). Award

Two awards sponsored by Elsevier and by IUCR for his poster presentation in ICCGE-19 in Keystone, CO ; Our paper on Zr doped β-Ga₂O₃, was featured in a review in the Compound Semiconductor Magazine: https://www.publishing.ninja/V4/page/9707/390/6/1

2018

106. Praneeth Ranga, Berardi Sensale-Rodriguez, Michael Scarpulla, Sriram Krishnamoorthy, "Low Pressure CVD Growth of N-Type Ga2O3 Thin Films Using Solid Ge Source", 2018 Materials Research Society . Conference Paper, 11/27/2018.

105. Praneeth Ranga, Sung Beom Cho, Rohan Mishra, Sriram Krishnamoorthy, " Polarization Engineering of ε-(AlGa)2O3/ε-Ga2O3 Heterostructures", Materials Research Society (MRS) Fall meeting (2018). Conference Paper, Presented, 11/26/2018.

104. Praneeth Ranga, Sung Beom Cho, Rohan Mishra, Sriram Krishnamoorthy, "Modeling of 2DEG Formation at Polar ε-(AlGa) 2O3/ε-Ga2O3 Heterojunctions", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). Conference Paper, Presented, 10/13/2018.

103. Praneeth Ranga*, Vivek Sattiraju, Jonathan Ogle, Berardi Sensale-Rodriguez, Luisa Whittaker-Brooks, Michael Scarpulla, Sriram Krishnamoorthy, "N-type Doping in LPCVD-grown β-Ga2O3 Films using Solid Source Dopants", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). Conference Paper, Presented, 10/12/2018.

102. Joseph Lyman*, Sriram Krishnamoorthy,"Intersubband Optical Transitions in Ultra-Wide Bandgap Quantum Well Structures", Annual Meeting of the American Physical Society (APS) Four Corners Section (2018). Conference Paper, Presented, 10/12/2018.

101. Sriram Krishnamoorthy et.al. Ge and Si-doped LPCVD-grown β- Ga2O3 Thin Films; 3rd US Workshop on Gallium Oxide (GOX 2018) Presented, 08/15/2018.

100. Gopalan P., Chanana A., Krishnamoorthy S., Nahata A., Scarpulla M. & Sensale-Rodriguez B. (2018). Ultrafast terahertz modulator based on metamaterial-integrated WSe2 thin-films. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. Vol. 2018-September

99. Yunshan Wang , Peter Dickens , Xiaojuan Ni , Emmanuel Lotubai , Samuel Sprawls , Feng Liu , Sriram Krishnamoorthy , Steve Blair , Kelvin Lynn , Michael Scarpulla and Berardi Sensale Rodriguez, “Photoluminescence from β-Ga2 O3 Bulk Crystals—Spectral Dependences on Incident Wavelength and Polarization”, Electronic Materials Conference 2018

Conference Presentations Based on Work done at Ohio State University

98. Zhanbo Xia , Chandan Joishi, Sriram Krishnamoorthy , Sanyam Bajaj , Yuewei Zhang , Mark Brenner, Saurabh Lodha and Siddharth Rajan, “DC and RF Characteristics of Submicron Delta‐Doped β‐Ga2 O3 Field Effect Transistors”, Electronic Materials Conference 2018.
97. Prashanth Gopalan, Ashish Chanana, Sriram Krishnamoorthy, Ajay Nahata, Michael Scarpulla and Berardi Sensale Rodriguez,” Exploring Transient Terahertz Carrier Dynamics in LargeArea WSe2 Thin Films”, Electronic Materials Conference 2018.
96. Hantian Gao , Nick Pronin , Shreyas Muralidharan , Rezaul Karim , Susan M. White , Thaddeus J. Asel , Geoffrey M. Foster , Sriram Krishnamoorthy , Siddharth Rajan , Lei Cao , Holger von Wenckstern , Marius Grundmann , Hongping Zhao , Buguo Wang and Leonard Brillson,” Native Point Defect Identification and Control in Ga2 O3 “, Electronic Materials Conference 2018

2017
95. Zhanbo Xia, Sriram Krishnamoorthy, Chandan Joishi, Sanyam Bajaj, Yuewei Zhang, Mark Brenner, Saurabh Lodha, Siddharth Rajan,” Delta-Doped β-Ga2O3 Field Effect Transistors with Patterned Regrown Ohmic  Contacts”, MRS (Fall) 2017
94. Choong Hee Lee, Sriram Krishnamoorthy, Pran K. Paul, Dante J. O'Hara, Mark R. Brenner, Roland K. Kawakami, Aaron. R. Arehart, Siddharth Rajan, “Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy”, NAMBE 2017 (BEST PAPER AWARD).
93. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Zane Jamal-Eddine, Andrew Allerman, Michael Moseley, Andrew Armstrong, Siddharth Rajan, “High efficiency tunnel-injected UV LEDs”, NAMBE 2017.
92. Zhanbo Xia, Sriram Krishnamoorthy, Chandan Joishi, Sanyam Bajaj, Yuewei Zhang, Jared Johnson, Mark Brenner, Jinwoo Hwang, Saurabh Lodha, Siddharth Rajan, “(Al0.2Ga0.8)2O3/ Ga2O3 Modulation-doped Field Effect Transistor with regrown contacts”, NAMBE 2017.
91. Dante J O'Hara, Tiancong Zhu, Amanda Hanks, Adam Ahmed, Choong Hee Lee, Mark R. Brenner, Sriram Krishnamoorthy, Roberto C. Myers, Siddharth Rajan, David W. McComb, Roland K. Kawakami, ”Room Temperature Ferromagnetism In Manganese Selenide Layers Grown By Molecular Beam Epitaxy”, NAMBE 2017.
90. Zhanbo Xia, Sriram Krishnamoorthy, Siddharth Rajan and Mark Brenner, “Demonstration of a β-(AlGa)2 O3 / Ga2 O3 Heterojunction Field Effect Transistor”, 59th Electronic Materials Conference, 2017.
89. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Zane Jamal-Eddine, Andrew A. Allerman, Michael Moseley, Andrew Armstrong and Siddharth Rajan, “Tunnel-Injected Sub-260 nm Ultraviolet Light Emitting Diodes”, 59th Electronic Materials Conference, 2017.
88. Choong Hee Lee, Sriram Krishnamoorthy and Siddharth Rajan, “MBE Grown 2D Semiconductor/GaN Heterojunction”, 59th Electronic Materials Conference, 2017.
87. Bajaj S., Yang Z., Akyol F., Park P., Zhang Y., Sohel S., Krishnamoorthy S., Meyer D. & Rajan S. Small-signal characteristics of graded AlGaN channel PolFETs. Device Research Conference DRC 2017.
86. Z. Xia, S. Krishnamoorthy, C. Joishi, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, and S. Rajan, “Delta-doped β-Ga2O3 Metal Semiconductor Field Effect Transistors with Regrown Ohmic Contacts”, IWGO 2017 2nd International Workshop on Gallium Oxide and Related Materials,Parma (Italy) – September 12-15, 2017
85. S. Krishnamoorthy, Z. Xia, C. Joishi, S. Bajaj, Y. Zhang, M. Brenner, S. Lodha, and S. Rajan “Towards Modulation-doped β-(AlGa)2O3/ Ga2O3 Field Effect Transistors for High Frequency Electronics”, IWGO 2017 2nd International Workshop on Gallium Oxide and Related Materials,Parma (Italy) – September 12-15, 2017
84. A.S. Pratiyush, S. Krishnamoorthy, S.V. Solanke, Z. Xia, R. Muralidharan, S. Rajan, and D.N. Nath,” Carrier transport and spectral responsivity studies in MBE Grown β-Ga2O3 MSM Solar-Blind Deep-UV Photodetector”, IWGO 2017 2nd International Workshop on Gallium Oxide and Related Materials,Parma (Italy) – September 12-15, 2017
83. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal-Eddine, Jared M.Johnson, Andrew Allerman, Michael W.Moseley, Andrew Armstrong, Jinwoo Hwang, and Siddharth Rajan, “Reflective Metal/Semiconductor Tunnel Junctions for AlGaN UV LEDs”, ISSLED 2017- 11th International Symposium on Semiconductor Light Emitting Devices (Best Paper Award)
82. Sriram Krishnamoorthy et.al. “Modulation-doped Gallium Oxide Heterostructures”, WOCSEMMAD 2017 (Invited)
2016
81. Sriram Krishnamoorthy et.al. “Delta-doped β-Ga2O3 Field Effect Transistor with ID,MAX = 238 mA/mm”, ISDRS 2016, Bethesda, MD.
80. Sriram Krishnamoorthy , Yuewei Zhang, Edwin Lee, Choong Hee Lee, William D. McCulloch, Jared M.Johnson, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, ” Modeling and Demonstration of High Current MoS2/GaN Interband Tunnel Junctions”, International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
79. Fatih Akyol et.al. ” Ultra‐Low Resistance GaN/InGaN/GaN Tunnel Junctions with Indium Content < 15%", International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
78. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin and Siddharth Rajan, ”III‐Nitride Tunneling Hot Electron Transistors with Current Gain above 10″, International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
77. Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Andrew Armstrong, Andrew Allerman and Siddharth Rajan, “Ultra‐Wide Bandgap AlGaN Channel MISFET with Low‐Resistance Ohmics”, International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
76. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Zane Jamal‐Eddine, Andrew Allerman, Michael Moseley, Andrew Armstrong and Siddharth Rajan, “Engineering of Hole Transport in Tunneling Injected UV‐A LEDs “, International Workshop on Nitride Semiconductors (IWN 2016) October 2016, Florida.
75. Siddharth RAJAN, Yuewei ZHANG, Fatih AKYOL, Sriram KRISHNAMOORTHY, “Tunnel Junctions for Next-Generation Visible and UV Optoelectronics (Invited)”, International Union of Materials Research Societies (IUMRS)- IECM 2016, Singapore.
74. Sriram Krishnamoorthy, Edwin Lee, Choong Hee Lee, William McCulloch, Yuewei Zhang, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, “High Current Density p-MoS2/n-GaN Inter-Band 2D/3D Tunnel Junctions”, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
73. Sriram Krishnamoorthy, Yuewei Zhang, Edwin Lee, Choong Hee Lee, William McCulloch, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, “Modeling and Demonstration of High Current MoS2/GaN Interband Tunnel Junctions “, International Workshop on Nitride Semiconductors (IWN 2016).
72. Edwin W. Lee, William D. McCulloch, Choong Hee Lee, Sriram Krishnamoorthy, Yiying Wu and Siddharth Rajan, “Layered 2H-MoS2/GaN Hot Electron Transistor”, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
71. Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy,Yuewei Zhang, Andrew Armstrong, Andrew Allerman and Siddharth Rajan, “Heterostructure Engineered Ohmic Contacts to Ultra-Wide Bandgap AlGaN “, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
70. Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared Johnson, Jinwoo Hwang and Siddharth Rajan, “Ultra-Low Resistance GaN Tunnel Homojunctions with Repeatable Differential Resistance and 150 kA/cm2 Current”, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
69. Choong Hee Lee, Sriram Krishnamoorthy,Dante J. O’Hara, Roberto C. Myers, Roland K. Kawakami and Siddharth Rajan,”Molecular Beam Epitaxy of GaSe on c-Sapphire(0001) Using Valved Se Cracking Source”, 58th Electronic Materials Conference, June 22-24, 2016, Newark, Delaware
68. S. Bajaj et.al. Ultra-Wide Bandgap AlGaN Channel MISFETs with Polarization Engineered Ohmics, 74th Device Research Conference (DRC), Newark, Delaware.
67. Current Gain above 10 in sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors with GaN/AlN Emitter, 74th Device Research Conference (DRC), Newark, Delaware.
66. Z. Yang et.al. Current Gain Above 10 in III-Nitride Tunneling Hot Electron Transistor, 2016 Lester Eastman Conference on High Performance Devices

65. S. Bajaj et.al. Heterostructure-Engineered Ohmics-based UBWG Al0.75Ga0.25N Channel MISFET, 2016 Lester Eastman Conference on High Performance Devices
64. Y. Zhang et.al. Graded p-AlGaN superlattice for reduced electron overflow in tunneling injected UVC LEDs, 2016 Lester Eastman Conference on High Performance Devices
63. Sriram Krishnamoorthy, Edwin Lee, Choong Hee Lee, William McCulloch, Yuewei Zhang, Jared Johnson, Lu Ma, Jinwoo Hwang, Yiying Wu and Siddharth Rajan, ”MoS2/ GaN Inter-band Tunnel Junctions (2D / 3D Tunnel Junctions)”, WOCSEMMAD 2016 (Workshop on Compound Semiconductor Materials and Devices).
2015
62. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker Monika, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan, “Polarization engineered Al0.55Ga0.45N tunnel junctions for ultraviolet emitters”, 11th International Conference on Nitride Semiconductors (ICNS-11), August 30th – September 4th, 2015, Beijing, China.
61. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B.Khurgin, and Siddharth Rajan, “Quasi-ballistic transport in AlGaN/GaN tunneling hot electron transistors”, 11th International Conference on Nitride Semiconductors (ICNS-11), August 30th – September 4th, 2015, Beijing, China.
60. Emre Gür,Fatih Akyol,Sriram Krishnamoorthy, Siddharth Rajan, and Steven A. Ringel, “Defects in N-Rich and In-Rich InxGa1-XN: In Composition Dependence”, 11th International Conference on Nitride Semiconductors (ICNS-11), August 30th – September 4th, 2015, Beijing, China.
59. Sriram Krishnamoorthy, Yuewei Zhang, Jared M Johnson, Fatih Akyol, Andrew Allerman, Michael W Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan,” UV Tunnel Junction LEDs” WOCSEMMAD 2015 (Workshop on Compound Semiconductor Materials and Devices) February 16-19, 2015
58. Sanyam Bajaj, Omor F Shoron, Pil Sung Park, Sriram Krishnamoorthy, Fatih Akyol, Ting-Hsiang Hung, Shahed Reza, Eduardo M Chumbes, Jacob B Khurgin and Siddharth Rajan, “Density-Dependent Electron Transport for Accurate Modeling of AlGaN/GaN HEMTs”, 73rd Device Research Conference (DRC), June 21-24, 2015.
57. Zhichao Yang, Yuewei Zhang, Sriram Krishnamoorthy, Digbijoy N. Nath, Jacob B. Khurgin, and Siddharth Rajan, “Modeling and Experimental Demonstration of Sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors”, 73rd Device Research Conference (DRC), June 21-24, 2015.
56. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Khandaker, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, and Siddharth Rajan,”Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs”, 73rd Device Research Conference (DRC), June 21-24, 2015 .
55. Edwin Lee, II, Choong Hee Lee, Pran Paul, Sriram Krishnamoorthy, Lu Ma, Yiying Wu, Aaron Arehart and Siddharth Rajan, “Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer”, 42nd International Symposium on Compound Semiconductors June 28-July 2, 2015 University of California, Santa Barbara, CA, 2015 .
54. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol and Siddharth Rajan,” Tunnel Junctions for III-Nitride Ultraviolet Optoelectronics” (Invited), 42nd International Symposium on Compound Semiconductors June 28-July 2, 2015 University of California, Santa Barbara, CA, 2015 .
53. Edwin W.Lee, Choong Hee Lee, Pran K. Paul, Sriram Krishnamoorthy,Lu Ma, Yiying Wu, Aaron Arehart and Siddharth Rajan, “Electrical and Optical Characterization of MoS2/GaN Heterojunctions Formed by Film Transfer”, 57TH Electronic Materials Conference June 24 – 26, 2015 .
52.Sanyam Bajaj,Omor F. Shoron, Fatih Akyol, Sriram Krishnamoorthy, Ting-Hsiang Hung, Jacob Khurgin and Siddharth Rajan, “Field and Electron Density Dependence of 2-Dimensional Electron Gas Velocity in GaN”, 57TH Electronic Materials Conference June 24 – 26, 2015 .
51. Yuewei Zhang, Sriram Krishnamoorthy,Jared M. Johnson, Fatih Akyol, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, Jinwoo Hwang and Siddharth Rajan, “Tunneling Injection of Holes in III-Nitride Ultraviolet Emitters “, 57TH Electronic Materials Conference June 24 – 26, 2015 .
50. Fatih Akyol, Sriram Krishnamoorthy,Yuewei Zhang and Siddharth Rajan, “3-Junction GaN Bipolar Cascade LEDs with Low On-Resistance”, 57TH Electronic Materials Conference June 24 – 26, 2015 .
49. Choong Hee Lee, Lu Ma, Sriram Krishnamoorthy, Edwin Lee, Yiying Wu and Siddharth Rajan,”Transferred Large-Area Single Crystal MoS2 Field Effect Transistors”, 57TH Electronic Materials Conference June 24 – 26, 2015 .
2014
48. Sriram Krishnamoorthy, Fatih Akyol, Siddharth Rajan “III-nitride tunnel junctions (Invited Paper)”, SPIE Photonics West OPTO, San Franscisco, CA.
47. Fatih Akyol, Sriram Krishnamoorthy and Siddharth Rajan, “Cascading Nitride light emitting diodes using low-resistance InGaN tunnel junctions”, Lester Eastman Conference on High Performance Devices, Aug 5-7, 2014
46. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Siddharth Rajan, “Design of Ga-polar low resistance polarization engineered GaN/InGaN tunnel junctions”, Electronic Materials Conference 2014, Santa Barbara, CA.
2013
45. Siddharth Rajan, Sriram Krishnamoorthy, Fatih Akyol, “Tunnel Junctions for efficient III Nitride Optoelectronics (Invited Talk)”, International Union of Materials Research Society, International Conference in Asia – 2013 (IUMRS-ICA 2013).
44. Sriram Krishnamoorthy , Fatih Akyol, Siddharth Rajan “III-Nitride Tunnel Junction Devices (Invited)”, National Workshop on III- Nitrides Materials and Devices, Solid State Physics Lab, SSPL,New Delhi.
43. Sriram Krishnamoorthy, Fatih Akyol, and Siddharth Rajan, “Tunnel Junctions for Efficient III- nitride Optoelectronics”, 17th International Workshop on The Physics of Semiconductor Devices, December 10-13, 2013, Noida, India.
42. Siddharth Rajan, Sriram Krishnamoorthy, Fatih Akyol, “III-Nitride Tunnel Junctions: Devices and Applications (Invited Paper)”, International Semiconductor Device Research Symposium(ISDRS 2013).
41. Fatih Akyol,Sriram Krishnamoorthy, Siddharth Rajan , “Overcoming Nitride Light Emitting Diode Efficiency Droop by Tunneling Based Carrier Regeneration”, International Semiconductor Device Research Symposium (ISDRS 2013).
40. Ting-Hsiang Hung ;Krishnamoorthy, S. ; Nath, D.N. ; Pil Sung Park ; Rajan, S., ” Interface charge engineering in GaN-based MIS-HEMTs”, 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Columbus, OH.
39.Siddharth Rajan, Sriram Krishnamoorthy, Fatih Akyol, “III-Nitride Tunnel Junctions: Device Engineering and Applications (Invited)”, 10th Topical Workshop on Heterostructure Microelectronics September 2-5, 2013 in Hakodate, Japan
38.Sriram Krishnamoorthy, Rohan Mishra, Oscar Restrepo, Jing Yang, Roberto Myers, Wolfgang Windl, and Siddharth Rajan, “Tunnel Injection of Holes in GaN using GdN/GaN heterojunction”, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
37.Tyler A Growden, Sriram Krishnamoorthy, Siddharth Rajan and Paul Berger, ” Record High Current Density ( 776 kA/cm2) InGaN/GaN Resonant Tunneling Diodes Using Polarization Induced Barriers”, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
36. Edwin W Lee, M.R. Laskar, Lu Ma, pil Sung Park, Sriram Krishnamoorthy, Digbijoy N Nath, Yiying Wu, and Siddharth Rajan, “Electrical Characterization of MoS2/GaN Heterojunctions”, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
35. Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Nath, Pil Sung Park, and Siddharth Rajan,” Interface charge and electron transport in GaN- Based MIS-HEMTs “, 10th International Conference on Nitride Semiconductors, Washington, DC 2013.
34. Edwin W Lee, M.R. Laskar, Lu Ma, pil Sung Park, Sriram Krishnamoorthy, Digbijoy N Nath, Yiying Wu, and Siddharth Rajan, “Growth and Electrical Characterization of MoS2/GaN Heterojunctions”, Electronic Materials Conference 2013, South Bend, IN.
33. Masihhur R. Laskar, Lu Ma, Santhakumar K, Pil Sung Park, Sriram Krishnamoorthy,Edwin Lee II, Digbijoy N. Nath, Edwin Lee II, Ye Shao, Y. J. Moon, Wu Lu, Yiying Wu, Siddharth Rajan,” Single Crystal (0001) Oriented MoS2 by CVD, Electronic Materials Conference 2013, South Bend, IN.
32. Ting-Hsiang Hung, Sriram Krishnamoorthy, Digbijoy Nath, Pil Sung Park, and Siddharth Rajan,”Interface charge effects on electron transport in Al2O3/AlGaN/GaN”, Electronic Materials Conference 2013, South Bend, IN
31. Sriram Krishnamoorthy, Fatih Akyol, and Siddharth Rajan, “Incorporation of GaN/InGaN and GdN/GaN tunnel junctions in commercial III-nitride LEDs”, Electronic Materials Conference 2013, South Bend, IN .
30.Sriram Krishnamoorthy, Rohan Mishra, Oscar Restrepo, Jing Yang, Roberto Myers, Wolfgang Windl, and Siddharth Rajan, “Efficient hole injection in GdN/GaN heterojunction”, Electronic Mateials Conference 2013, South Bend, IN .
29. Yang, Jie;Cui, Sharon ; Ma, T.P. ; Hung, Ting-Hsiang ; Nath, Digbijoy ;Krishnamoorthy, Sriram ; Rajan, Siddharth, “Determination of trap energy levels in AlGaN/GaN HEMT”, Device Research Conference (DRC), South Bend, IN.
28. Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan,”Interfacial Charge Properties of Atomic Layer Deposited Dielectric/III-nitride Interfaces”, MRS Spring meeting 2013, San Fransisco, CA.
27. Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan,”Study of Interfacial Charge Properties and Engineering of Atomic Layer Deposited Dielectric/III-nitride Interfaces”, CS Mantech 2013, New Orleans.
26. Masihhur R. Laskar, Lu Ma, Santhakumar K, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Edwin Lee II, Ye Shao, Y. J. Moon, Wu Lu, Yiying Wu, Siddharth Rajan,”CVD-grown Single Crystal Layered MoS2″, MRS Spring meeting 2013, San Fransisco, CA.
2012
25. Probing Electrically Active Traps in AlGaN/GaN HEMT by Inelastic Electron Tunneling Spectroscopy, J. Yang, S. Cui, X. Sun, Z. Liu, T. P. Ma, T. H. Hung, D. Nath, S. Krishnamoorthy, and S. Rajan, 43rd IEEE Semiconductor Interface Specialists Conference December 6-8, 2012, San Diego, CA
24. “III-nitride tunnel junctions: device engineering and applications” , S. Krishnamoorthy, F. Akyol, J.Yang, P.S.Park, R. C. Myers, and S. Rajan, International Workshop on Nitride Semiconductors 2012,October 14-19, 2012, Sapporo, Japan.(Invited talk delivered by Prof. Rajan)
23. S. Krishnamoorthy , F. Akyol, J. Yang, P. Sung Park, R. Myers, S.Rajan,”Efficient Tunneling in Wide Bandgap III-Nitride Semiconductors”, 29th North American Conference on Molecular Beam Epitaxy (NAMBE 2012), Stone Mountain Park, Georgia October 14-17, 2012.
22.Sriram Krishnamoorthy , Fatih Akyol, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan,”III-Nitride Interband Tunneling Devices” IEEE Lester Eastman Conference on High Performance Devices, Brown University, Aug 7-9 2012 (Talk Delivered by Prof. Rajan)
21. Sriram Krishnamoorthy , Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, “GdN nano-islands enabled inter-band tunneling in III- Nitrides “, Electronic Materials Conference (EMC), June 2012
20. Sriram Krishnamoorthy , Fatih Akyol, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan, “Record low tunnel junction specific resistivity (< 3X10^-4 Ohm cm^2) in GaN inter-band tunnel junctions “, Device Research Conference (DRC), 2012 69th Annual , June 2012
19. Tyler A. Growden, Sriram Krishnamoorthy, Digbijoy Nath, Anisha Ramesh, Siddharth Rajan, and Paul R. Berger, ?Methods for Attaining High Interband Tunneling Current in III-Nitrides?, 70th Device Research Conference, June 18-20, 2012, University Park, PA (USA)
18. Fatih Akyol, Digbijoy N. Nath, Sriram Krishnamoorthy , Pil Sung Park and Siddharth Rajan, “The Efficiency Droop Characteristics of Reversed Polarization (N-polar) GaN Light Emitting Diodes (LEDs)”, 54th Electronic Materials Conference, June 20-22, 2012 University Park, PA (USA)
17. Ting-Hsiang Hung, Michele Esposto, Digbijoy Nath, Sriram Krishnamoorthy, Pil Sung Park and Siddharth Rajan, “Study of the interface properties of Atomic Layer Deposited (ALD) Al2O3 on different polarity of GaN with post metal annealing (PMA)”, 54th Electronic Materials Conference, June 20-22, 2012 University Park, PA (USA)
16.Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan , Jing Yang, Roberto Myers, Limei Yang, Michael Mills, “ Tunneling in III- Nitride Semiconductors“, Workshop on Compound Semiconductor Materials and Devices, 2012, Napa Valley, GA, USA ( Invited talk delivered by Prof. Rajan)
2011
15. Sriram Krishnamoorthy, Jing Yang, Pil Sung Park, Roberto Myers, and Siddharth Rajan, “Enhanced Tunneling in GaN p-n Junctions Using Ultra-thin GdN Layers“, MRS Fall meeting Nov 28-Dec 2, 2011, Boston, MA (USA)
14. Michele Esposto, Sriram Krishnamoorthy ,Digbijoy N. Nath, Sanyam Bajaj, Ting-Hsiang Hung and Siddharth Rajan, “Study of Interface Barrier of ALD deposited Al2O3/GaN”, MRS (Materials Research Society)Fall Meeting, Nov 28-Dec 2, 2011, Boston, MA (USA)
13. Sriram Krishnamoorthy, Digbijoy Nath, Sanyam Bajaj, and Siddharth Rajan, “ Inter-band GaN/InGaN/GaN tunnel diodes“, AVS 2011, TN
12. Michele Esposto, Sriram Krishnamoorthy , Digbijoy N. Nath, Sanyam Bajaj, Ting-Hsiang Hung and Siddharth Rajan, “Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride“, AVS (American Vacuum Society)58th International Symposium, Oct 31-Nov 4, 2011, Nashville, TN (USA)
11. Sriram Krishnamoorthy, Pil Sung Park , and Siddharth Rajan , “III-Nitride Tunnel Diodes with Record Forward Tunnel Current Density” ,69th Device Research Conference (Late News), UC Santa Barbara, 2011.
10. Sriram Krishnamoorthy, Aaron Arehart, Digbijoy Nath, Fatih Akyol,Pil Sung Park, Michele Esposto, Steve Ringel, Siddharth Rajan, “Enhanced Inter-band tunneling by polarization engineering in InGaN/GaN quantum wells“, lectronic Materials Conference 2011, UC Santa Barbara, CA
9. Pil Sung Park, Digbijoy Nath, Sriram Krishnamoorthy, and Siddharth Rajan, “Flattened transconducatance in highly scaled AlGaN/GaN HEMTs”, International Conference on Nitride Semiconductors (ICNS9) 2011, Glasgow, UK
8. Prashanth Ramesh, Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan, and Gregory Washington” Fabrication and Characterization of Gallium Nitride Unimorphs for Optical MEMS Applications” , ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems SMASIS2011
7. Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy, Siddharth Rajan,“Flattened Transconductance (gm) in a Highly Scaled AlGaN/GaN HEMTUsing a Polarization-Induced 2D/3D Hybridized Channel Design”, Electronic Materials Conference EMC 2011
6. Emre Gur, Sriram Krishnamoorty, Zeng Zhang, Siddharth Rajan, Steven Ringel,”Defect Characterization of InGaN layer by Deep Level Transient and Optical Spectroscopies”, Electronic Materials Conference 2011
5. Siddharth Rajan, and Sriram Krishnamoorthy , “Tunneling in III-Nitrides“, Workshop on Compound Semiconductor Materials and Devices, Feb 2011, Savannah, GA, USA ( Invited talk delivered by Prof. Rajan)
2010
4. Digbijoy Nath, Sriram Krishnamoorthy , Fatih Akyol, Siddharth Rajan, “InGaN Quantum Well Devices“, Workshop on Innovative Devices and Systems (WINDS), December 2010, Hawai. (Presented by Prof. Rajan)
3. Sriram Krishnamoorthy , Digbijoy Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, Siddharth Rajan, “Polarization-engineered GaN/InGaN/GaN tunnel junctons“, Late Breaking News, International Workshop on Nitrides (IWN), Tampa, 2010.
2. Michele Esposto, Pil Sung Park, Digbijoy Nath, Sriram Krishnamoorthy , Fatih Akyol, Valerio De Lecce, Alessandro Chini, and Siddharth Rajan, “Design of GaN HEMTs for power switching operation”, 19th European Workshop on Heterostructure Devices, Crete, Greece 2010
1. Prashanth Ramesh, Sriram Krishnamoorthy , Pil Sung Park, Siddharth Rajan, and Gregory Washington, “Distributed intelligence using gallium nitride based active devices”, SPIE Active and Passive Smart Structures and Integrated Systems, San Diego, CA 2010 (Best Student Paper & Presentation award – Third place)