GROUP NEWS
- June 2020: Our group members are going to present a number of exciting papers on Gallium Oxide MOVPE growth, devices and modeling at the virtual EMC (2 presentations) and DRC (2 presentations,1 poster) conferences.
- 78th Device Research Conference
- Arkka Bhattacharyya : High-Density Electron Gas β-Ga2O3 Field Effect transistors with Metalorganic Vapor Phase Epitaxy-Regrown Ohmic Contacts
- Saurav Roy : Design and simulation of β-Ga2O3 vertical Schottky barrier diode with p-type III-Nitride guard ring for enhanced breakdown
- Saurav Roy: Improving the BV-Ron trade-off of β-Ga2O3 vertical Schottky barrier diode Using Dielectric Superjunction (Poster)
- 62nd Electronic Materials Conference
- Praneeth Ranga: High-Density Degenerate Electron Gas (1013 cm-2) in β-(AlxGa1-x)2O3/ β-Ga2O3 Heterostructures Grown By Metalorganic Vapor Phase Epitaxy
- Arkka Bhattacharyya : Selective Area Regrown Low Resistance Ohmic Contacts on β-Ga2O3 Epitaxial Layers Using Metalorganic Vapor Phase Epitaxy
- 78th Device Research Conference
- May 2020: Praneeth Ranga is awarded University Graduate Research Fellowship 2020-2021. Congratulations Praneeth!
- October 2019: Praneeth’s Applied Physics Express journal article on MOVPE growth and doping in Aluminum Gallium Oxide listed as Spotlights 2019 article. (https://iopscience.iop.org/article/10.7567/1882-0786/ab47b8/meta)
PRESS COVERAGE
12. “Electrical and Optical Properties of Zr doped β-G2O3 Single Crystals Grown by Czochralski Method,” Saleh, M., S. Swain, J. Jesenovec, J. Varley, A. Bhattacharyya, S. Krishnamoorthy, K. Lynn. In ICCGE-19, Keystone, CO, 2019. (Poster). Award
Two awards sponsored by Elsevier and by IUCR for his poster presentation in ICCGE-19 in Keystone, CO ; Our paper on Zr doped β-Ga2O3, was featured in a review in the Compound Semiconductor Magazine: Lead authors from Washington State University https://www.publishing.ninja/V4/page/9707/390/6/1
11. Equipping MOCVD Tools With Dual Use Capability, April 2019
https://compoundsemiconductor.net/article/106963/Equipping_MOCVD_Tools_With_Dual_Use_Capability
May 2019 https://www.designworldonline.com/how-to-create-a-dual-use-mocvd-platform/
10. U Engineers Start Study on Better High-Voltage Electronics, Dec 2018
University of Utah engineers will study better semiconductor material for high-voltage electronics,
Dec 2018
BEFORE JOINING UTAH
- Layered 2D dichalcogenides grow on 3D semiconductors May 2017 http://nanotechweb.org/cws/article/tech/68868
- Quantum tunneling boosts UV LED efficiency , April 2016 http://www.compoundsemiconductor.net/pdf/magazines/2016/csApril2016_2.pdf
- “Band engineering for improved photo-electro-chemical etch”, Semiconductor Today, 14th July 2014. http://www.semiconductor-today.com/news_items/2014/JUL/OSU_140714.shtml
- “Epitaxial cascading of LEDs to tackle efficiency droop”, Compound Semiconductor, 25th September 2013. http://www.compoundsemiconductor.net/article/-Epitaxial-cascading-of-nitride-LEDs-overcomes-efficiency– droop.html
- “Tunneling to avoid efficiency droop in nitride semiconductor LEDs”, Semiconductor Today, 30th August 2013. http://www.semiconductor-today.com/news_items/2013/AUG/OSU_300813.html
- “Lowering tunneling resistance in GaN/InGaN/GaN structures”, Semiconductor Today, 3rd April 2013. http://www.semiconductor-today.com/news_items/2013/APR/OSU_030413.html
- “Flattening transconductance profiles in nitride HEMTs”, Semiconductor Today, 23rd February 2012. http://www.semiconductor-today.com/news_items/2012/FEB/OSU_220212.html
- “Reversing polarization to tackle overshoot and droop”, Semiconductor Today, 30th March 2012. http://www.semiconductor- today.com/news_items/2012/MAR/OSU_290312.html
- “Ohio boosts nitride tunneling current to 118 A/cm2 at -1 V”, Semiconductor Today, 24th November 2010. http://www.semiconductor-today.com/news_items/2010/NOV/OHIO_241110.htm