Citation Metrics:

For most updated publication list, please use the google scholar links below

Google scholar by year

Google scholar by citations

JOURNAL PUBLICATIONS:

Praneeth Ranga*, Arkka Bhattacharyya*, Adrian Chmielewski, Saurav Roy, Rujun Sun, Michael A Scarpulla, Nasim Alem, Sriram Krishnamoorthy (* Equal contribution)

[67] Leila Ghadbeigi, Jacqueline Cooke, Giang T Dang, Toshiyuki Kawaharamura, Tatsuya Yasuoka, Rujun Sun, Praneeth Ranga, Sriram Krishnamoorthy, Michael A Scarpulla, Berardi Sensale-Rodriguez, Optical Characterization of Gallium Oxide α and β Polymorph Thin-Films Grown on c-Plane Sapphire, Journal of Electronic Materials 1-9  (2021).

 

2020

[66] Compensation in (-201) homoepitaxial beta-Ga2O3 thin layers grown by metalorganic vapor-phase epitaxy

Brian Andrew Eisner, Praneeth Ranga, Arkka Bhattacharyya, Sriram Krishnamoorthy, Michael A. Scarpulla, Journal of Applied Physics 128 (19), 195703 (2020).

[65] Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped β-Ga2O3 crystals

Rujun SUN, Yu Kee Ooi, Arkka Bhattacharyya, Muad Saleh, Sriram Krishnamoorthy, Kelvin G. Lynn, Michael A. Scarpulla, Applied Physics Letters 117 (21), 212104 (2020).

[64] The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3 measured by terahertz spectroscopy

Prashanth Gopalan, Sean Knight, Ashish Chanana, Megan Stokey, Praneeth Ranga, Michael A. Scarpulla, Sriram Krishnamoorthy, Vanya Darakchieva, Zbigniew Galazka, Klaus Irmscher, Andreas Fiedler, Steve Blair, Mathias M. Schubert, Berardi Sensale-Rodriguez, Applied Physics Letters 117 (25), 252103 (2020). (Editor's Pick)

[63] Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Nasim Alem and Sriram Krishnamoorthy, Applied Physics Letters 117, 172105 (2020)

[62] Low Temperature Homoepitaxy Of (010) β-Ga2O3 By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Jonathan Ogle, Luisa Whittaker-Brooks, Sriram Krishnamoorthy, Applied Physics Letters 117 (14), 142102 (2020).

[61] Electro-thermal co-design of β-(AlxGa1-x)2O3/Ga2O3 modulation doped field effect transistors

Bikramjit Chatterjee, Yiwen Song, James Spencer Lundh, Yuewei Zhang, Zhanbo Xia, Zahabul Islam, Jacob Leach, Craig McGray, Praneeth Ranga, Sriram Krishnamoorthy, Aman Haque, Siddharth Rajan and Sukwon Choi, Appl. Phys. Lett. 117, 153501 (2020);

[60] Design of β-Ga2O3 Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown

Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy, IEEE Transactions on Electron Devices 67 (11), 4842-4848 (2020).

[59] Highly tunable, polarization-engineered two- dimensional electron gas in ε-(AlGa)2O3/ ε-Ga2O3 heterostructures

Praneeth Ranga*, Sung Beom Cho*, Rohan Mishra, Sriram Krishnamoorthy, Applied Physics Express 13, 061009 (2020). (*-Equal contribution)

[58] Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0. 74)2O3/ β -Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam, Yu Kee Ooi, Michael A Scarpulla, Daniel Feezell, Sriram Krishnamoorthy, Applied Physics Express 13 (4), 045501 (2020).

[57] Synthesis and Characterization of Large‐Area Nanometer‐Thin β‐Ga2O3 Films from Oxide Printing of Liquid Metal Gallium

Jacqueline Cooke, Leila Ghadbeigi, Rujun Sun, Arkka Bhattacharyya, Yunshan Wang, Michael A Scarpulla, Sriram Krishnamoorthy, Berardi Sensale-Rodriguez, physica status solidi (a) 217 (10), 1901007 (2020).

[56] Electrical and Optical Properties of Degenerately Doped Hf:β-Ga2O3 Single Crystals

Muad Saleh, Joel B. Varley, Jani Jesenovec, Arkka Bhattacharyya, Santosh Swain, Sriram Krishnamoorthy, Kelvin Lynn, Semiconductor Science and Technology 35 (4), 04LT01 (2020).

[55] Theoretical investigation of (AlxGa1-x)2O3/ Ga2O3 intersubband transitions and quantum well infrared photodetectors

Joseph Lyman, Sriram Krishnamoorthy, Journal of Applied Physics 127 (17), 173102 (2020).

[54] Schottky barrier height engineering in β-Ga2O3 using thin SiO2 as a thin interfacial layer

Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Michael Scarpulla, Kelvin Lynn and Sriram Krishnamoorthy, IEEE Journal of the Electron Devices Society 8, 286-294 (2020).

 

---

2019

[53] Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley, Arkka Bhattacharyya, Daniel Feezell, Sriram Krishnamoorthy, “Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy”, Applied Physics Express 12 (11), 111004 (2019) (Spotlight Article 2019)

 

[52] Muad Saleh, Arkka Bhattacharyya, Joel Basile Varley, Santosh Kumar Swain, Jani Jesenovec,
Sriram Krishnamoorthy, Kelvin Lynn, “Electrical and optical properties of Zr doped β-Ga2O3 single crystals”, Applied Physics Express, 12 085502 (2019).

 

[51] Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone, Sriram Krishnamoorthy, Wyatt Moore, Mark Brenner, Aaron R Arehart, Steven A Ringel, Siddharth Rajan, “Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3”, Applied Physics Letters 115 (15), 152106 (2019).

 

[50] Prashanth Gopalan, Ashish Chanana, Sriram Krishnamoorthy, Ajay Nahata, Michael A Scarpulla, Berardi Sensale‐Rodriguez, “Ultrafast THz modulators with WSe2 thin films”, Optical Materials Express 9 (2), 826‐836 (2019).

---

2018

[49] Yunshan Wang, Peter T Dickens, Joel B Varley, Xiaojuan Ni, Emmanuel Lotubai, Samuel Sprawls, Feng Liu, Vincenzo Lordi, Sriram Krishnamoorthy, Steve Blair, Kelvin G Lynn, Michael Scarpulla, Berardi Sensale‐Rodriguez, “Incident wavelength and polarization dependence of spectral shifts in β‐ Ga 2 O 3 UV photoluminescence”, Nature Scientific reports 8 (1), 18075 (2018).

---

Publications based on work done before joining University of Utah

48. Anamika Singh Pratiyush, Sriram Krishnamoorthy, Sandeep Kumar, Zhanbo Xia, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N Nath, “ MBE grown Self-Poweredb {eta}-Ga2O3 MSM Deep-UV Photodetector”,  Japanese Journal of Applied Physics 57 (6), 060313 (2018).

47. Hantian Gao, Shreyas Muralidharan, Nick Pronin , Md Rezaul Karim, Susan M. White , Thaddeus Asel, Geoffrey Foster, Sriram Krishnamoorthy, Siddharth Rajan, Lei R. Cao, Masataka Higashiwaki, Holger von Wenckstern, Marius Grundmann, Hongping Zhao, David C. Look, and Leonard J. Brillson, “Native Point Defect Identification and Control in Ga2O3” , Applied Physics Letters 112 (24), 242102 (2018).

46. Chandan Joishi, Subrina Rafique, Zhanbo Xia, Lu Han, Sriram Krishnamoorthy, Yuewei Zhang, Saurabh Lodha, Hongping Zhao, Siddharth Rajan, “Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes”, Applied Physics Express 11 (3), 031101 (2018).

45. Zhanbo Xia, Chandan Joishi, Sriram Krishnamoorthy, Sanyam Bajaj, Yuewei Zhang, Mark Brenner, Saurabh Lodha, Siddharth Rajan, “Delta doped β-Ga2O3 Field Effect Transistors with Regrown Ohmic Contacts”, IEEE Electron Device Letters (accepted for publication) (2018).

44. Choong Hee Lee, Sriram Krishnamoorthy, Pran K Paul, Dante J O'Hara, Mark R Brenner, Roland K Kawakami, Aaron R Arehart, Siddharth Rajan, “Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy”, Applied Physics Letters 111 (20), 202101 (2017).

43. Fatih Akyol, Yuewei Zhang, Sriram Krishnamoorthy, Siddharth Rajan, “Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content”, Applied Physics Express 10 (12), 121003 (2017).

42. Sriram Krishnamoorthy, Z. Xia, C. Joishi, Y. Zhang, J. McGlone, J. Johnson, M. Brenner, A. R. Arehart, J. A. Hwang, S. Lodha, S. Rajan, “Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor” , Applied Physics Letters 111 (2), 023502 (2017).

41. Sriram Krishnamoorthy , Zhanbo Xia, Sanyam Bajaj, Mark Brenner, and Siddharth Rajan, “Delta-doped Beta- Gallium Oxide Field Effect Transistor”, Applied Physics Express 10 (5), 051102 (2017) – 2017 Spotlight Article – http://iopscience.iop.org/journal/1882-0786/page/Spotlights

40. Anamika Singh Pratiyush , Sriram Krishnamoorthy , Swanand Vishnu Solanke, Zhanbo Xia, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N. Nath, “High Responsivity in Molecular Beam Epitaxy (MBE) grown beta-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector” , Applied Physics Letters, 110(22), 221107 (2017). (ASP and SK Equal contribution).

39. JM Johnson, CH Lee, S Krishnamoorthy, S Rajan, J Hwang, “Atomic Scale Structure and Defects in 2D GaSe Films and Van der Waals Interface”, Microscopy and Microanalysis 23 (S1), 1728-1729 (2017).

38. JM Johnson, S Krishnamoorthy, S Rajan, J Hwang, “ Point and Extended Defects in Ultra Wide Band Gap β-Ga 2 O 3 Interfaces”, Microscopy and Microanalysis 23 (S1), 1454-1455 (2017).

37. Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Andrew A Allerman, Michael W Moseley, Andrew M Armstrong, Siddharth Rajan, “Tunnel-injected sub-260 nm ultraviolet light emitting diodes”, Applied Physics Letters 110 (20), 201102 (2017).

36. Choong Hee Lee , Sriram Krishnamoorthy , Dante J. O’Hara, Jared M. Johnson, John Jamison, Roberto C. Myers, Roland K. Kawakami, Jinwoo Hwang, Siddharth Rajan, “ Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates “, arXiv:1610.06265 Click here (CHL and SK Equal contribution ) , Journal of Applied Physics 121 (9), 094302 (2017). – Article covered in nanotechweb.org (http://nanotechweb.org/cws/article/tech/68868)

35. Choong Hee Lee, Edwin W. Lee II, William McCulloch, Zane Jamal-Eddine, Sriram Krishnamoorthy , Michael J Newburger, Roland K. Kawakami, Yiying Wu and Siddharth Rajan, “A self-limiting layer-by-layer etching technique for 2H-MoS2”, Applied Physics Express, Volume 10, Number 3, 035201 (2017).

34. Yuewei Zhang, Sriram Krishnamoorthy , Fatih Akyol , Jared M. Johnson , Andrew A. Allerman , Michael William Moseley , Andrew M. Armstrong , Jinwoo Hwang , Siddharth Rajan , “Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs” – Accepted for publication in Applied Physics Letters (2017).

33. Sanyam Bajaj, Zhichao Yang, Fatih Akyol, Pil Sung Park, Yuewei Zhang, Sriram Krishnamoorthy, David J. Meyer, Siddharth Rajan, “Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity”– IEEE Transactions on Electron Devices 64 (8), 3114-3119 (2017).

32. Sriram Krishnamoorthy , Edwin W. Lee II, Choong Hee Lee, Yuewei Zhang, William D. McCulloch, Jared M. Johnson, Jinwoo Hwang, Yiying Wu, Siddharth Rajan” High Current Density 2D/3D MoS2/GaN Esaki Tunnel Diodes“, Applied Physics Letters 109 (18), 183505 (2016) .

31. Yuewei Zhang, Sriram Krishnamoorthy , Fatih Akyol , Andrew A. Allerman , Michael William Moseley , Andrew M. Armstrong , Siddharth Rajan , ” Design and Demonstration of Ultra-Wide Bandgap AlGaN Tunnel Junctions ”, Phys. Lett. 109, 121102 (2016).

30. Yuewei Zhang, Sriram Krishnamoorthy , Fatih Akyol , Andrew A. Allerman , Michael William Moseley , Andrew M. Armstrong , Siddharth Rajan , ” Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes ” . Applied Physics Letters 109, 191105 (2016).

29. Fatih Akyol , Sriram Krishnamoorthy , Yuewei Zhang , Jared Johnson , Jinwoo Hwang , Siddharth Rajan, ” Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance ” Applied Physics Letters 108, 131103 (2016).

28. Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy , Yuewei Zhang, Siddharth Rajan , ” AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts ”, Applied Physics Letters 109, 133508 (2016).

27. Zhichao Yang , Yuewei Zhang , Sriram Krishnamoorthy , Digbijoy Neelim Nath , Jacob B. Khurgin , Siddharth Rajan “Current Gain above 10 in sub-10 nm Base III-Nitride Tunneling Hot Electron Transistors with GaN/AlN Emitter“, Applied Physics Letters 108, 192101 (2016) .

26. Yuewei Zhang, Andrew Allerman, Sriram Krishnamoorthy , Fatih Akyol, Michael W. Moseley, Andrew Armstrong, Siddharth Rajan , ” Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs ” Applied Physics Express 9, 052102 (2016).

25. Emre Gür, Fatih Akyol, Sriram Krishnamoorthy , Siddharth Rajan, Steven A Ringel , ” Deep level defects in N-rich and In-rich In(x) Ga(1-x)N: in composition dependence ” Superlattices and Microstructures, doi:10.1016/j.spmi.2016.05.009 (2016).

24. Fatih Akyol, Sriram Krishnamoorthy , Yuewei Zhang, Siddharth Rajan, "GaN Based Three-junction Cascaded Light Emitting Diode with Low-resistance InGaN Tunnel Junctions", Applied Physics Express 8, 082103 (2015).

23. Yuewei Zhang, Sriram Krishnamoorthy , Jared M Johnson, Fatih Akyol, Andrew Allerman, Michael W Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan, " Interband Tunneling for Hole Injection in III- Nitride Ultra-violet Emitters" Applied Physics Letters 106, 141103 (2015).

22. Choong Hee Lee, William McCulloch, Lu Ma, Edwin Lee, Sriram Krishnamoorthy , Jinwoo Hwang, Yiying Wu, and Siddharth Rajan, " Transferred Large Area Single Crystal MoS2 Field Effect Transistors", Applied Physics Letters, 107, 193503 (2015).

21. Edwin W. Lee II, Choong Hee Lee, Pran K Paul, Lu Ma, William D McCulloch, Sriram Krishnamoorthy , Yiying Wu, Aaron Arehart, Siddharth Rajan, "Layer-Transferred MoS2/GaN PN Diodes", Applied Physics Letters 107, 103505 (2015).

20. Sanyam Bajaj , Omor Faruk Shoron , Pil Sung Park , Sriram Krishnamoorthy , Fatih Akyol , Ting-Hsiang Hung , Shahed Reza , Eduardo Chumbes , Jacob B. Khurgin , Siddharth Rajan, " Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs ", Applied Physics Letters, 107, 153504 (2015).

19. Pil Sung Park, Sriram Krishnamoorthy, Sanyam Bajaj, Digbijoy Nath, and Siddharth Rajan, " Recess- Free Non-alloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs ", IEEE Electron Device Letters, 36, NO. 3, pp 226- 228 (2015).

18. Sriram Krishnamoorthy, Fatih Akyol, and Siddharth Rajan, " InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes ", Applied Physics Letters 105, 141104 (2014).

17. Ting-Hsiang Hung, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy Nath and Siddharth Rajan,"Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs " , IEEE Electron Device Letters 35 (3), 312-314 (2014).

16. Prashanth Ramesh, Sriram Krishnamoorthy , Siddharth Rajan and Gregory Washington, "Energy Band Engineering for photoelectrochemical etching of GaN/InGaN heterostructures " , Applied Physics Letters 104, 243503 (2014).

15. Sriram Krishnamoorthy , Fatih Akyol, Pil Sung Park, and Siddharth Rajan, "Low Resistance GaN/InGaN/GaN tunnel junctions ", Applied Physics Letters 102, 113503 (2013).

14. Sriram Krishnamoorthy , Thomas Kent, Jing Yang, Pil Sung Park, Roberto Myers, and Siddharth Rajan, "GdN Nanoisland-Based GaN Tunnel Junctions ", Nano Letters 13 (6) 2570- 2575 (2013).

13. Fatih Akyol, Sriram Krishnamoorthy, and Siddharth Rajan, “Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop ", Applied Physics Letters 103, 081107 (2013).

12. Jie Yang, Sharon Cui, T. P. Ma, Ting-Hsiang Hung, Digbijoy Nath, Sriram Krishnamoorthy, and Siddharth Rajan, “Electron Tunneling Spectroscopy Study of Electrically Active Traps in AlGaN/GaN High Electron Mobility Transistors", Applied Physics Letters 103, 223507 (2013) .

11. Jie Yang, Sharon Cui, T. P. Ma, Ting-Hsiang Hung, Digbijoy Nath, Sriram Krishnamoorthy, and Siddharth Rajan, " A study of electrically active traps in AlGaN/GaN high electron mobility transistor", Applied Physics Letters 103, 173520 (2013).

10. Masihhur R. Laskar, Lu Ma, ShanthaKumar K, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Wu Lu, Yiying Wu, and Siddharth Rajan, "Large Area Single Crystal (0001) Oriented MoS2 Thin Films", Applied Physics Letters, 102, 252108 (2013).

9. Ting-Hsiang Hung, Sriram Krishnamoorthy, Michele Esposto, Digbijoy N. Nath , Pil Sung Park and Siddharth Rajan, "Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces", Applied Physics Letters 102, 072105 (2013).

8. Prashanth Ramesh, Sriram Krishnamoorthy, Siddharth Rajan, and Gregory Washington," Fabrication and characterization of piezoelectric gallium nitride switch for optical MEMS applications", Smart Materials and Structures 21, 094003 (2012).

7. Fatih Akyol, Digbijoy N. Nath, Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan, "Suppression of Electron Overflow and Efficiency Droop in N-polar GaN Green LEDs", Applied Physics Letters 100, 111118 (2012).

6. V Di Lecce, Sriram Krishnamoorthy, Michele Esposto, Ting-Hsiang Hung, Alessandro Chini, and Siddharth Rajan, "Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes", Electronics Letters 48, 347 (2012).

5. Pil Sung Park, Digbijoy N. Nath, Sriram Krishnamoorthy, and Siddharth Rajan, "Electron Gas Dimensionality Engineering in AlGaN/GaN HEMTs using Polarization", Applied Physics Letters, 100, 063507 (2012).

4. Sriram Krishnamoorthy, Pil Sung Park, and Siddharth Rajan, "Demonstration of forward inter-band tunneling in GaN by Polarization engineering", Applied Physics Letters 99, 233504 (2011).

3. Emre Gur, Zeng Zhang, Sriram Krishnamoorthy , Siddharth Rajan and Steve Ringel, "Detailed characterization of deep levels in InGaN", Applied Physics Letters 99, 092109 (2011).

2. Michele Esposto, Sriram Krishnamoorthy , Digbijoy Nath, Sanyam Bajaj, Ting-Hsiang Hung and Siddharth Rajan, "Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride ", Applied Physics Letters 99, 133503 (2011).

1. Sriram Krishnamoorthy, Digbijoy Nath, Fatih Akyol, Pil Sung Park, Michele Esposto, Siddharth Rajan "Polarization engineered GaN/InGaN/GaN tunnel diodes," Applied Physics Letters 97,203502 (2010).

CONFERENCE PROCEEDINGS

15. Bajaj S., Yang Z., Akyol F., Park P., Zhang Y., Sohel S., Krishnamoorthy S., Meyer D. & Rajan S. (2017). Small-signal characteristics of graded AlGaN channel PolFETs. Device Research Conference - Conference Digest, DRC. Published, 08/01/2017.

14. Yang Z., Zhang Y., Krishnamoorthy S., Nath D., Khurgin J. & Rajan S. (2016). Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter. Device Research Conference - Conference Digest, DRC. Vol. 2016-August. Published, 08/22/2016.

13. Bajaj S., Akyol F., Krishnamoorthy S., Zhang Y., Armstrong A., Allerman A. & Rajan S. (2016). Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics. Device Research Conference - Conference Digest, DRC. Vol. 2016-August. Published, 08/22/2016.

12. Zhang Y., Krishnamoorthy S., Akyol F., Khandaker S., Allerman A., Moseley M., Armstrong A. & Rajan S. (2015). Sub 300 nm wavelength III-Nitride tunnel-injected ultraviolet LEDs. Device Research Conference - Conference Digest, DRC. Vol. 2015-August, 69-70. Published, 08/03/2015.

11. Bajaj S., Shoron O., Park P., Krishnamoorthy S., Akyol F., Hung T., Reza S., Chumbes E., Khurgin J. & Rajan S. (2015). Density-dependent electron transport for accurate modeling of AlGaN/GaN HEMTs. Device Research Conference - Conference Digest, DRC. Vol. 2015-August, 33-34. Published, 08/03/2015.

10. Yang Z., Zhang Y., Krishnamoorthy S., Nath D., Khurgin J. & Rajan S. (2015). Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors. Device Research Conference - Conference Digest, DRC. Vol. 2015-August, 53-54. Published, 08/03/2015.

9. Krishnamoorthy S., Akyol F. & Rajan S. (2014). III-nitride tunnel junctions for efficient solid state lighting. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8986. Published, 01/01/2014.

8. Hung T., Park P., Krishnamoorthy S., Nath D., Bajaj S. & Rajan S. (2014). Lateral energy band engineering of Al2O3/III-nitride interfaces. Device Research Conference - Conference Digest, DRC. 131-132. Published, 01/01/2014.

7. Yang J., Cui S., Ma T., Hung T., Nath D., Krishnamoorthy S. & Rajan S. (2013). Determination of trap energy levels in AlGaN/GaN HEMT. Device Research Conference - Conference Digest, DRC. 79-80. Published, 12/16/2013.

6. Hung T., Krishnamoorthy S., Nath D., Park P. & Rajan S. (2013). Interface charge engineering in GaN-based MIS-HEMTs. 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 147-150. Published, 12/01/2013.

5. Hung T., Esposto M., Nath D., Krishnamoorthy S., Park P. & Rajan S. (2013). Study of interfacial charge properties and engineering of ALD dielectric/III-nitride interfaces. 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. 191-194. Published, 11/15/2013.

4. Krishnamoorthy S., Akyol F., Yang J., Park P., Myers R. & Rajan S. (2012). Record low tunnel junction specific resistivity (<3×10^-4Ωcm²) in GaN inter-band tunnel junctions. Device Research Conference - Conference Digest, DRC. 157-158. Published, 10/05/2012.

3. Growden T., Krishnamoorthy S., Nath D., Ramesh A., Rajan S. & Berger P. (2012). Methods for attaining high interband tunneling current in III-Nitrides. Device Research Conference - Conference Digest, DRC. 163-164. Published, 10/05/2012.

2. Ramesh P., Washington G., Krishnamoorthy S. & Rajan S. (2011). Fabrication and characterization of Gallium Nitride unimorphs for optical MEMS applications. ASME 2011 Conference on Smart Materials, Adaptive Structures and Intelligent Systems, SMASIS 2011. Vol. 1, 201-209. Published, 12/01/2011.

1. Krishnamoorthy S., Park P. & Rajan S. (2011). III-nitride tunnel diodes with record forward tunnel current density. Device Research Conference - Conference Digest, DRC. Published, 12/01/2011.